RJH60D7DPQ-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT, 90A, 600V, N-CHANNEL
$9.32
Available to order
Reference Price (USD)
1+
$6.76000
10+
$6.04000
25+
$5.43560
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RJH60D7DPQ-E0#T2
$9.32
Product details
Enhance your power control systems with the RJH60D7DPQ-E0#T2 single IGBT transistor from Renesas Electronics America Inc. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The RJH60D7DPQ-E0#T2 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the RJH60D7DPQ-E0#T2 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 300 W
- Switching Energy: 1.1mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: 60ns/190ns
- Test Condition: 300V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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