STGWA50HP65FB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 5
$2.94
Available to order
Reference Price (USD)
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$2.94000
500+
$2.9106
1000+
$2.8812
1500+
$2.8518
2000+
$2.8224
2500+
$2.793
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STGWA50HP65FB2
$2.94
Product details
Experience unparalleled power control with the STGWA50HP65FB2 single IGBT transistor by STMicroelectronics. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The STGWA50HP65FB2 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the STGWA50HP65FB2 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 86 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 272 W
- Switching Energy: 580µJ (off)
- Input Type: Standard
- Gate Charge: 151 nC
- Td (on/off) @ 25°C: -/115ns
- Test Condition: 400V, 50A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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