IKD10N60RFATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 20A 150W PG-TO252-3
$1.78
Available to order
Reference Price (USD)
2,500+
$0.82824
5,000+
$0.81802
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IKD10N60RFATMA1
$1.78
Product details
Enhance your power control systems with the IKD10N60RFATMA1 single IGBT transistor from Infineon Technologies. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The IKD10N60RFATMA1 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the IKD10N60RFATMA1 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 150 W
- Switching Energy: 190µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 12ns/168ns
- Test Condition: 400V, 10A, 26Ohm, 15V
- Reverse Recovery Time (trr): 72 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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