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STGB4M65DF2

STMicroelectronics
STGB4M65DF2 Preview
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
$0.61
Available to order
Reference Price (USD)
1,000+
$0.57363
2,000+
$0.53950
5,000+
$0.51675
Exquisite packaging
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STGB4M65DF2

STGB4M65DF2

$0.61

Product details

The STGB4M65DF2 from STMicroelectronics is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the STGB4M65DF2 ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the STGB4M65DF2 for your next project request a quote today.

General specs

  • Product Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 16 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 68 W
  • Switching Energy: 40µJ (on), 136µJ (off)
  • Input Type: Standard
  • Gate Charge: 15.2 nC
  • Td (on/off) @ 25°C: 12ns/86ns
  • Test Condition: 400V, 4A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 133 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D²PAK

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