FGA25S125P-SN00337
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$2.78
Available to order
Reference Price (USD)
450+
$3.08533
Exquisite packaging
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FGA25S125P-SN00337
$2.78
Product details
Maximize power efficiency with the FGA25S125P-SN00337 single IGBT transistor by Fairchild Semiconductor. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The FGA25S125P-SN00337 features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the FGA25S125P-SN00337 delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1250 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
- Power - Max: 250 W
- Switching Energy: 1.09mJ (on), 580µJ (off)
- Input Type: Standard
- Gate Charge: 204 nC
- Td (on/off) @ 25°C: 24ns/502ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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