SCTWA10N120
STMicroelectronics
STMicroelectronics
IC POWER MOSFET 1200V HIP247
$10.93
Available to order
Reference Price (USD)
600+
$7.59800
Exquisite packaging
Discount
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SCTWA10N120
$10.93
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™ Long Leads
- Package / Case: TO-247-3
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