Shopping cart

Subtotal: $0.00

FQU2N100TU

onsemi
FQU2N100TU Preview
onsemi
MOSFET N-CH 1000V 1.6A IPAK
$1.50
Available to order
Reference Price (USD)
1+
$1.24000
10+
$1.10100
100+
$0.87670
500+
$0.68628
1,000+
$0.54775
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi FQU2N100TU is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FQU2N100TU

FQU2N100TU

$1.50

Product details

Enhance your electronic designs with the FQU2N100TU single MOSFET transistor from onsemi, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The FQU2N100TU features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the FQU2N100TU particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the FQU2N100TU represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9Ohm @ 800mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Viewed products

Fairchild Semiconductor

FCP25N60N-F102

$0.00 (not set)
Texas Instruments

CSD17510Q5A

$0.00 (not set)
Infineon Technologies

IRFH7914TRPBF

$0.00 (not set)
Vishay Siliconix

SI7868ADP-T1-GE3

$0.00 (not set)
IXYS

IXFH220N20X3

$0.00 (not set)
IXYS

IXFA230N075T2-TRL

$0.00 (not set)
Fairchild Semiconductor

FDMS8670

$0.00 (not set)
Nexperia USA Inc.

PSMN1R4-40YLDX

$0.00 (not set)
Nexperia USA Inc.

BUK72150-55A,118

$0.00 (not set)
Rohm Semiconductor

RSR020N06HZGTL

$0.00 (not set)
Top