SLA6026
Sanken
Sanken
TRANS 3NPN/3PNP DARL 60V 12SIP
$3.42
Available to order
Reference Price (USD)
1+
$6.77000
18+
$6.09500
36+
$5.55333
108+
$5.01167
252+
$4.60532
504+
$4.19895
1,008+
$3.65715
2,502+
$3.61200
Exquisite packaging
Discount
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SLA6026
$3.42
Product details
Introducing the SLA6026 BJT Array by Sanken, a premium offering in Discrete Semiconductor Products. This sophisticated transistor array combines multiple bipolar junction transistors with closely matched parameters. The SLA6026 excels in applications demanding coordinated switching or amplification across several channels. Its design emphasizes thermal stability and parameter uniformity throughout the array. The product delivers high current gain with minimal variation between individual transistors. With its compact footprint, it enables high-density circuit designs without performance compromise. The SLA6026 features low noise operation for sensitive signal processing applications. Its robust construction withstands mechanical stress and environmental factors. This BJT Array demonstrates excellent long-term parameter stability for reliable system operation. Power supply designers value its consistent performance in voltage regulation circuits. Audio engineers utilize it for balanced amplification stages in professional equipment. Automotive electronics benefit from its durability in challenging operating conditions. The SLA6026 also serves critical functions in industrial control systems. Sanken has implemented rigorous quality control measures throughout production. The component's design facilitates heat dissipation in high-power applications. Its lead-free composition meets modern environmental standards. For design engineers seeking reliable, high-performance transistor arrays, the SLA6026 delivers exceptional value. Explore its capabilities further by submitting an inquiry through our online portal today.
General specs
- Product Status: Obsolete
- Transistor Type: 3 NPN, 3 PNP Darlington (3-Phase Bridge)
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 12mA, 6A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 6A, 4V
- Power - Max: 5W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 12-SIP Exposed Tab
- Supplier Device Package: 12-SIP
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