HN4B01JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A ESV PLN
$0.39
Available to order
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4,000+
$0.07140
8,000+
$0.06426
12,000+
$0.05712
28,000+
$0.05355
100,000+
$0.04760
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HN4B01JE(TE85L,F)
$0.39
Product details
The HN4B01JE(TE85L,F) from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision electronic applications. This product is part of the Discrete Semiconductor Products category, specifically optimized for circuits requiring multiple transistors in a compact package. Ideal for both industrial and commercial use, it ensures reliable performance and enhanced efficiency. The HN4B01JE(TE85L,F) features excellent thermal stability and low noise operation, making it suitable for sensitive electronic environments. Its robust construction guarantees durability even in demanding conditions. With its advanced design, this BJT Array offers seamless integration into various circuit designs. Whether you're designing amplifiers, switches, or signal processors, the HN4B01JE(TE85L,F) delivers consistent results. Its versatility extends to both analog and digital applications, providing flexibility for engineers. The product's compact form factor saves valuable board space without compromising performance. Trust Toshiba Semiconductor and Storage's expertise in semiconductor technology for your next project. Applications include audio amplification systems, power management modules, and sensor interfaces. For automotive electronics, it ensures reliable operation under varying temperatures. In consumer electronics, it enhances device performance and longevity. Industrial automation systems benefit from its high-speed switching capabilities. To get started with the HN4B01JE(TE85L,F), submit an online inquiry today for pricing and availability.
General specs
- Product Status: Active
- Transistor Type: NPN, PNP (Emitter Coupled)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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