DMG6601LVT-7
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V 26TSOT
$0.42
Available to order
Reference Price (USD)
3,000+
$0.09810
6,000+
$0.09315
15,000+
$0.08573
30,000+
$0.08078
75,000+
$0.07335
150,000+
$0.07200
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Diodes Incorporated DMG6601LVT-7 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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DMG6601LVT-7
$0.42
Product details
General specs
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V
- Power - Max: 850mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
