SCT3080AW7TL
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 29A TO263-7
$15.21
Available to order
Reference Price (USD)
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$15.21000
500+
$15.0579
1000+
$14.9058
1500+
$14.7537
2000+
$14.6016
2500+
$14.4495
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SCT3080AW7TL
$15.21
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 125W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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