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SQ2361AEES-T1_GE3

Vishay Siliconix
SQ2361AEES-T1_GE3 Preview
Vishay Siliconix
MOSFET P-CH 60V 2.8A SSOT23
$0.70
Available to order
Reference Price (USD)
3,000+
$0.23826
6,000+
$0.22374
15,000+
$0.20922
30,000+
$0.19906
Exquisite packaging
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Vishay Siliconix SQ2361AEES-T1_GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SQ2361AEES-T1_GE3

SQ2361AEES-T1_GE3

$0.70

Product details

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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