FGH50N6S2D
onsemi
onsemi
IGBT 600V 75A TO247-3
$14.73
Available to order
Reference Price (USD)
1+
$12.33000
10+
$11.37900
450+
$9.23380
900+
$8.66929
Exquisite packaging
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| EMS | 3-7 days |
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FGH50N6S2D
$14.73
Product details
Maximize power efficiency with the FGH50N6S2D single IGBT transistor by onsemi. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The FGH50N6S2D features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the FGH50N6S2D delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
- Power - Max: 463 W
- Switching Energy: 260µJ (on), 250µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 13ns/55ns
- Test Condition: 390V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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