RGSX5TS65EHRC11
Rohm Semiconductor
Rohm Semiconductor
8S SHORT-CIRCUIT TOLERANCE, 650V
$11.75
Available to order
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$11.75000
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$11.6325
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$11.515
1500+
$11.3975
2000+
$11.28
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$11.1625
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RGSX5TS65EHRC11
$11.75
Product details
The RGSX5TS65EHRC11 from Rohm Semiconductor is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the RGSX5TS65EHRC11 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the RGSX5TS65EHRC11 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 114 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Power - Max: 404 W
- Switching Energy: 3.44mJ (on), 1.9mJ (off)
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 43ns/113ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 116 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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