STGW60H65DRF
STMicroelectronics
STMicroelectronics
IGBT 650V 120A 420W TO247
$5.45
Available to order
Reference Price (USD)
1+
$9.40000
30+
$8.09333
120+
$7.02742
510+
$6.11939
1,020+
$5.32980
Exquisite packaging
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STGW60H65DRF
$5.45
Product details
The STGW60H65DRF by STMicroelectronics is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the STGW60H65DRF is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the STGW60H65DRF and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
- Power - Max: 420 W
- Switching Energy: 940µJ (on), 1.06mJ (off)
- Input Type: Standard
- Gate Charge: 217 nC
- Td (on/off) @ 25°C: 85ns/178ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 19 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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