RGS80TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
8US SHORT-CIRCUIT TOLERANCE, 650
$8.43
Available to order
Reference Price (USD)
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$8.43000
500+
$8.3457
1000+
$8.2614
1500+
$8.1771
2000+
$8.0928
2500+
$8.0085
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RGS80TS65DHRC11
$8.43
Product details
Upgrade your power electronics with the RGS80TS65DHRC11 single IGBT transistor from Rohm Semiconductor. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The RGS80TS65DHRC11 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the RGS80TS65DHRC11 delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 73 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 272 W
- Switching Energy: 1.05mJ (on), 1.03mJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 37ns/112ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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