RJH65T14DPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 100A TO247A
$4.19
Available to order
Reference Price (USD)
1+
$4.19000
500+
$4.1481
1000+
$4.1062
1500+
$4.0643
2000+
$4.0224
2500+
$3.9805
Exquisite packaging
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RJH65T14DPQ-A0#T0
$4.19
Product details
The RJH65T14DPQ-A0#T0 from Renesas Electronics America Inc is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the RJH65T14DPQ-A0#T0 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the RJH65T14DPQ-A0#T0 for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
- Power - Max: 250 W
- Switching Energy: 1.3mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 38ns/125ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 250 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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