R8002ANX
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 800V 2A TO220FM
$3.08
Available to order
Reference Price (USD)
1+
$2.71000
10+
$2.43800
100+
$1.95960
500+
$1.61000
1,000+
$1.33400
2,500+
$1.28800
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R8002ANX
$3.08
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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