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FQD7N10LTM

onsemi
FQD7N10LTM Preview
onsemi
MOSFET N-CH 100V 5.8A DPAK
$0.70
Available to order
Reference Price (USD)
2,500+
$0.26134
5,000+
$0.24428
12,500+
$0.23575
25,000+
$0.23110
Exquisite packaging
Discount
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FQD7N10LTM

FQD7N10LTM

$0.70

Product details

General specs

  • Product Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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