R6535KNX3C16
Rohm Semiconductor
Rohm Semiconductor
650V 35A, TO-220AB, HIGH-SPEED S
$7.19
Available to order
Reference Price (USD)
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$7.19000
500+
$7.1181
1000+
$7.0462
1500+
$6.9743
2000+
$6.9024
2500+
$6.8305
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R6535KNX3C16
$7.19
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1.3mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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