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SQJQ112ER-T1_GE3

Vishay Siliconix
SQJQ112ER-T1_GE3 Preview
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 100 V (D-S)
$4.05
Available to order
Reference Price (USD)
1+
$4.05000
500+
$4.0095
1000+
$3.969
1500+
$3.9285
2000+
$3.888
2500+
$3.8475
Exquisite packaging
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Vishay Siliconix SQJQ112ER-T1_GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SQJQ112ER-T1_GE3

SQJQ112ER-T1_GE3

$4.05

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: 8-PowerSMD, Gull Wing

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