R6520ENZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 20A TO-247, LOW-NOISE POWER
$6.07
Available to order
Reference Price (USD)
1+
$6.07000
500+
$6.0093
1000+
$5.9486
1500+
$5.8879
2000+
$5.8272
2500+
$5.7665
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R6520ENZ4C13
$6.07
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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