RQ3E080BNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 8A 8HSMT
$0.43
Available to order
Reference Price (USD)
3,000+
$0.10620
6,000+
$0.10030
15,000+
$0.09145
30,000+
$0.08555
75,000+
$0.08260
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RQ3E080BNTB
$0.43
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 15.2mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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