Shopping cart

Subtotal: $0.00

RQ3E080BNTB

Rohm Semiconductor
RQ3E080BNTB Preview
Rohm Semiconductor
MOSFET N-CH 30V 8A 8HSMT
$0.43
Available to order
Reference Price (USD)
3,000+
$0.10620
6,000+
$0.10030
15,000+
$0.09145
30,000+
$0.08555
75,000+
$0.08260
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rohm Semiconductor RQ3E080BNTB is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RQ3E080BNTB

RQ3E080BNTB

$0.43

Product details

Enhance your electronic designs with the RQ3E080BNTB single MOSFET transistor from Rohm Semiconductor, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The RQ3E080BNTB features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the RQ3E080BNTB particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the RQ3E080BNTB represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 15.2mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN

Viewed products

Torex Semiconductor Ltd

XP261N7002TR-G

$0.00 (not set)
STMicroelectronics

STE48NM50

$0.00 (not set)
Infineon Technologies

IPLK70R750P7ATMA1

$0.00 (not set)
Fairchild Semiconductor

SFR9024TF

$0.00 (not set)
Infineon Technologies

BSC883N03LSG

$0.00 (not set)
Vishay Siliconix

SI2325DS-T1-E3

$0.00 (not set)
Infineon Technologies

IRFB3206PBF

$0.00 (not set)
onsemi

NVTFS5C673NLWFTAG

$0.00 (not set)
Microchip Technology

DN2535N3-G-P003

$0.00 (not set)
EPC

EPC2206

$0.00 (not set)
Top