R6511END3TL1
Rohm Semiconductor
Rohm Semiconductor
650V 11A TO-252, LOW-NOISE POWER
$2.94
Available to order
Reference Price (USD)
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$2.94000
500+
$2.9106
1000+
$2.8812
1500+
$2.8518
2000+
$2.8224
2500+
$2.793
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R6511END3TL1
$2.94
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 124W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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