HUF76609D3ST
onsemi
onsemi
MOSFET N-CH 100V 10A TO252AA
$1.01
Available to order
Reference Price (USD)
2,500+
$0.43864
5,000+
$0.41791
12,500+
$0.40311
25,000+
$0.40096
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi HUF76609D3ST is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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HUF76609D3ST
$1.01
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 49W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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