Shopping cart

Subtotal: $0.00

R6504END3TL1

Rohm Semiconductor
R6504END3TL1 Preview
Rohm Semiconductor
650V 4A TO-252, LOW-NOISE POWER
$1.80
Available to order
Reference Price (USD)
1+
$1.80000
500+
$1.782
1000+
$1.764
1500+
$1.746
2000+
$1.728
2500+
$1.71
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rohm Semiconductor R6504END3TL1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
R6504END3TL1

R6504END3TL1

$1.80

Product details

Enhance your electronic designs with the R6504END3TL1 single MOSFET transistor from Rohm Semiconductor, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The R6504END3TL1 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the R6504END3TL1 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the R6504END3TL1 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

Infineon Technologies

IPB042N10N3GE8187ATMA1

$0.00 (not set)
Toshiba Semiconductor and Storage

TK39N60X,S1F

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AOU3N60

$0.00 (not set)
STMicroelectronics

STP3NK60ZFP

$0.00 (not set)
onsemi

FDS86267P

$0.00 (not set)
onsemi

NVJS4151PT1G

$0.00 (not set)
Panjit International Inc.

PJQ5445-AU_R2_000A1

$0.00 (not set)
Goford Semiconductor

G20P10KE

$0.00 (not set)
Vishay Siliconix

SIHG16N50C-E3

$0.00 (not set)
onsemi

FDB0260N1007L

$0.00 (not set)
Top