Shopping cart

Subtotal: $0.00

FDB0260N1007L

onsemi
FDB0260N1007L Preview
onsemi
MOSFET N-CH 100V 200A TO263-7
$6.56
Available to order
Reference Price (USD)
800+
$4.12276
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi FDB0260N1007L is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FDB0260N1007L

FDB0260N1007L

$6.56

Product details

Enhance your electronic designs with the FDB0260N1007L single MOSFET transistor from onsemi, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The FDB0260N1007L features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the FDB0260N1007L particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the FDB0260N1007L represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

Viewed products

Rohm Semiconductor

RD3H160SPTL1

$0.00 (not set)
Rohm Semiconductor

R6004ENX

$0.00 (not set)
Vishay Siliconix

IRFD9110PBF

$0.00 (not set)
Nexperia USA Inc.

PMN30ENEAX

$0.00 (not set)
Infineon Technologies

IPU95R1K2P7AKMA1

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AON7421

$0.00 (not set)
Renesas Electronics America Inc

2SK1589-T1B-A

$0.00 (not set)
onsemi

FDMS8622

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AOI444

$0.00 (not set)
Nexperia USA Inc.

PSMN004-60B,118

$0.00 (not set)
Top