Shopping cart

Subtotal: $0.00

EMA3T2R

Rohm Semiconductor
EMA3T2R Preview
Rohm Semiconductor
TRANS 2PNP PREBIAS 0.15W
$0.08
Available to order
Reference Price (USD)
8,000+
$0.06462
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rohm Semiconductor EMA3T2R is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
EMA3T2R

EMA3T2R

$0.08

Product details

Discover the EMA3T2R from Rohm Semiconductor, a top-tier pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered for optimal performance in amplification and switching applications, offering high reliability and efficiency. The EMA3T2R features built-in pre-biasing, which simplifies circuit design and enhances performance. Its superior thermal characteristics ensure stable operation across a wide temperature range. Ideal for use in automotive control modules, audio equipment, and power management systems, the EMA3T2R delivers consistent and precise results. The transistor array is also commonly found in aerospace electronics, security systems, and wearable technology. With its high gain and low power consumption, the EMA3T2R is perfect for energy-sensitive applications. The robust construction and long-term durability of this BJT array make it a smart investment for any project. To explore how the EMA3T2R can meet your specific requirements, request a quote today and our experts will assist you promptly.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5

Viewed products

NXP USA Inc.

PQMD12Z

$0.00 (not set)
Panasonic Electronic Components

XN0411600L

$0.00 (not set)
Infineon Technologies

BCR10PNH6730

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1963(TE85L,F)

$0.00 (not set)
onsemi

NSBC115EDXV6T1G

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1903,LF(CT

$0.00 (not set)
Nexperia USA Inc.

PUMH7F

$0.00 (not set)
Toshiba Semiconductor and Storage

RN4610(TE85L,F)

$0.00 (not set)
Rohm Semiconductor

FMG2AT148

$0.00 (not set)
Infineon Technologies

BCR108SH6327XTSA1

$0.00 (not set)
Top