EMA3T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS 2PNP PREBIAS 0.15W
$0.08
Available to order
Reference Price (USD)
8,000+
$0.06462
Exquisite packaging
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EMA3T2R
$0.08
Product details
Discover the EMA3T2R from Rohm Semiconductor, a top-tier pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered for optimal performance in amplification and switching applications, offering high reliability and efficiency. The EMA3T2R features built-in pre-biasing, which simplifies circuit design and enhances performance. Its superior thermal characteristics ensure stable operation across a wide temperature range. Ideal for use in automotive control modules, audio equipment, and power management systems, the EMA3T2R delivers consistent and precise results. The transistor array is also commonly found in aerospace electronics, security systems, and wearable technology. With its high gain and low power consumption, the EMA3T2R is perfect for energy-sensitive applications. The robust construction and long-term durability of this BJT array make it a smart investment for any project. To explore how the EMA3T2R can meet your specific requirements, request a quote today and our experts will assist you promptly.
General specs
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Flat Lead
- Supplier Device Package: EMT5
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