NSBC115EDXV6T1G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SOT563
$0.45
Available to order
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4,000+
$0.10935
8,000+
$0.10305
12,000+
$0.09675
28,000+
$0.08940
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NSBC115EDXV6T1G
$0.45
Product details
The NSBC115EDXV6T1G by onsemi is a high-performance pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered to excel in a variety of electronic applications, ensuring reliability and efficiency. The NSBC115EDXV6T1G features integrated pre-biasing, reducing the need for external components and streamlining design. Its outstanding thermal stability guarantees consistent operation under different conditions. This BJT array is ideal for signal amplification, load switching, and interface circuits. The NSBC115EDXV6T1G is also widely used in industrial automation, consumer electronics, and telecommunication systems. With its high gain and low noise characteristics, it is perfect for precision and sensitive applications. The compact and robust design of the NSBC115EDXV6T1G makes it suitable for both mass production and specialized projects. Engineers and designers can trust this transistor array for its consistent quality and performance. For more details on the NSBC115EDXV6T1G and to obtain a personalized quote, please submit an inquiry and our team will assist you promptly.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 100kOhms
- Resistor - Emitter Base (R2): 100kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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