Shopping cart

Subtotal: $0.00

DTD523YETL

Rohm Semiconductor
DTD523YETL Preview
Rohm Semiconductor
TRANS PREBIAS NPN 150MW EMT3
$0.49
Available to order
Reference Price (USD)
3,000+
$0.08658
6,000+
$0.08177
15,000+
$0.07456
30,000+
$0.06975
75,000+
$0.06734
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rohm Semiconductor DTD523YETL is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
DTD523YETL

DTD523YETL

$0.49

Product details

The DTD523YETL from Rohm Semiconductor is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased single transistor offers reliable switching and amplification, making it ideal for low-power circuits. With optimized thermal performance and consistent operation, it ensures stability in various electronic designs. The compact form factor and robust construction cater to modern PCB layouts. Key features include integrated bias resistors for simplified circuit design, low saturation voltage for energy efficiency, and high current gain for enhanced signal processing. Typical applications include automotive control modules, IoT sensor interfaces, and portable medical devices. Upgrade your projects with the DTD523YETL submit your inquiry today for bulk pricing and datasheets.

General specs

  • Product Status: Active
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 12 V
  • Resistor - Base (R1): 2.2 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 260 MHz
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: EMT3

Viewed products

onsemi

MMUN2140LT1G

$0.00 (not set)
Rohm Semiconductor

DTD513ZMT2L

$0.00 (not set)
Nexperia USA Inc.

PDTA143XQC-QZ

$0.00 (not set)
Nexperia USA Inc.

PDTD113ZQAZ

$0.00 (not set)
Infineon Technologies

BCR185E6327HTSA1

$0.00 (not set)
Diodes Incorporated

ADTC114YUAQ-7

$0.00 (not set)
Diodes Incorporated

DDTA123TUA-7-F

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1113ACT(TPL3)

$0.00 (not set)
Fairchild Semiconductor

FJV3113RMTF

$0.00 (not set)
onsemi

MMUN2134LT1G

$0.00 (not set)
Top