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RN1113ACT(TPL3)

Toshiba Semiconductor and Storage
RN1113ACT(TPL3) Preview
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.08A CST3
$0.34
Available to order
Reference Price (USD)
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$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
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$0.323
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Toshiba Semiconductor and Storage RN1113ACT(TPL3) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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RN1113ACT(TPL3)

RN1113ACT(TPL3)

$0.34

Product details

Precision-engineered for signal integrity, Toshiba Semiconductor and Storage's RN1113ACT(TPL3) pre-biased BJT offers predictable gain characteristics critical for feedback systems. The transistor's monolithic construction ensures perfect resistor matching, eliminating thermal drift issues in differential amplifiers. Target applications include industrial process control instrumentation, laboratory equipment signal paths, and avionics data acquisition modules. Its gold-bonded leads provide corrosion resistance in high-humidity environments, while the halogen-free mold compound meets ecological directives. The device supports high-frequency operation up to VHF ranges when properly impedance-matched. Access reference designs incorporating RN1113ACT(TPL3) by submitting a project brief through our engineering collaboration portal.

General specs

  • Product Status: Active
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3

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