DTD513ZETL
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS NPN 150MW EMT3
$0.47
Available to order
Reference Price (USD)
3,000+
$0.08442
Exquisite packaging
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DTD513ZETL
$0.47
Product details
Rohm Semiconductor's DTD513ZETL sets the benchmark for pre-biased BJTs with its advanced epitaxial process, yielding superior current handling per footprint area. The device demonstrates exceptional beta linearity under varying collector currents, crucial for instrumentation amplifiers. Its applications span across electric vehicle charging stations, precision agricultural sensors, and industrial IoT gateways. The transistor's hermetically sealed variants address military-grade reliability requirements, while standard versions cater to commercial electronics. Features like solder-dip finish and tape-reel packaging accommodate high-volume manufacturing. Simplify your amplifier designs download the DTD513ZETL SPICE model after registering on our technical portal.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 260 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
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