DDTC115EUA-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
$0.24
Available to order
Reference Price (USD)
3,000+
$0.04347
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
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DDTC115EUA-7-F
$0.24
Product details
The DDTC115EUA-7-F from Diodes Incorporated revolutionizes compact circuit design with its pre-configured bipolar transistor solution. Integrating base-emitter resistors on-die, this BJT maintains stable biasing against supply voltage fluctuations. It shines in energy harvesting systems, wireless charging circuits, and HMI touch controllers. The device's low-profile DFN package enables thermal vias for improved heat dissipation in dense layouts. Characterized by ultra-low popcorn noise, it's ideal for sensitive measurement equipment. Automotive-qualified options are available for under-hood electronics. Reduce development cycles with this application-ready component use our live chat feature for immediate technical support on DDTC115EUA-7-F integration.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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