DTC023YMT2L
Rohm Semiconductor
        
                
                                Rohm Semiconductor                            
                        
                                TRANS PREBIAS NPN 50V VMT3                            
                        $0.25
                            
                                
                                Available to order
                            
                        Reference Price (USD)
8,000+
                                            $0.03000
                                        16,000+
                                            $0.02550
                                        24,000+
                                            $0.02400
                                        56,000+
                                            $0.02250
                                        200,000+
                                            $0.02100
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Rohm Semiconductor DTC023YMT2L is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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                            Product details
Engineered for efficiency, the DTC023YMT2L pre-biased BJT by Rohm Semiconductor delivers superior signal amplification in compact packages. Its built-in bias network eliminates external components, reducing board space and assembly costs. The transistor excels in load switching, LED driving, and audio pre-amplification scenarios. Notable characteristics involve thermal shutdown protection, wide operating temperature ranges, and compatibility with automated pick-and-place systems. Industries leveraging this solution include industrial automation (PLC signal conditioning), consumer electronics (battery management systems), and telecommunications (signal repeaters). Streamline your BOM with this versatile component   request a quote now for lead time details.
                General specs
- Product Status: Active
 - Transistor Type: NPN - Pre-Biased
 - Current - Collector (Ic) (Max): 100 mA
 - Voltage - Collector Emitter Breakdown (Max): 50 V
 - Resistor - Base (R1): 2.2 kOhms
 - Resistor - Emitter Base (R2): 10 kOhms
 - DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 - Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
 - Current - Collector Cutoff (Max): -
 - Frequency - Transition: 250 MHz
 - Power - Max: 150 mW
 - Mounting Type: Surface Mount
 - Package / Case: SOT-723
 - Supplier Device Package: VMT3
 
