PDTC123JQCZ
Nexperia USA Inc.
Nexperia USA Inc.
PDTC123JQC/SOT8009/DFN1412D-3
$0.26
Available to order
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$0.2574
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$0.2548
1500+
$0.2522
2000+
$0.2496
2500+
$0.247
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PDTC123JQCZ
$0.26
Product details
Nexperia USA Inc.'s PDTC123JQCZ sets the benchmark for pre-biased BJTs with its advanced epitaxial process, yielding superior current handling per footprint area. The device demonstrates exceptional beta linearity under varying collector currents, crucial for instrumentation amplifiers. Its applications span across electric vehicle charging stations, precision agricultural sensors, and industrial IoT gateways. The transistor's hermetically sealed variants address military-grade reliability requirements, while standard versions cater to commercial electronics. Features like solder-dip finish and tape-reel packaging accommodate high-volume manufacturing. Simplify your amplifier designs download the PDTC123JQCZ SPICE model after registering on our technical portal.
General specs
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 230 MHz
- Power - Max: 360 mW
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1412D-3
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