BSM400D12P2G003
Rohm Semiconductor
Rohm Semiconductor
SILICON CARBIDE POWER MODULE. B
$2,571.43
Available to order
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$2442.8585
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BSM400D12P2G003
$2,571.43
Product details
The BSM400D12P2G003 by Rohm Semiconductor is a top-tier MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product is perfect for applications requiring high power efficiency and compact design, offering exceptional performance and reliability.\n\nKey attributes of the BSM400D12P2G003 include minimal conduction losses, high switching speed, and superior thermal management. The array configuration allows for efficient use of PCB space while maintaining high performance. Its design ensures compatibility with a variety of driving circuits, making it highly versatile.\n\nIdeal applications include robotics, consumer electronics, and aerospace systems. In robotics, it provides precise motor control and power management. Consumer electronics benefit from its efficiency and compact size. Aerospace systems rely on its reliability under extreme conditions.\n\nEnhance your designs with the BSM400D12P2G003. Contact us for pricing and availability details. Our experts are ready to help you find the perfect solution for your needs.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 85mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 10V
- Power - Max: 2450W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module
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