HS8MA2TCR1
Rohm Semiconductor
Rohm Semiconductor
30V DUAL COMMON DRAIN PCH+NCH PO
$1.11
Available to order
Reference Price (USD)
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$1.11000
500+
$1.0989
1000+
$1.0878
1500+
$1.0767
2000+
$1.0656
2500+
$1.0545
Exquisite packaging
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HS8MA2TCR1
$1.11
Product details
The HS8MA2TCR1 by Rohm Semiconductor is a cutting-edge MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product delivers exceptional performance in power switching applications, making it a preferred choice for engineers.\n\nThe HS8MA2TCR1 features low conduction losses, high switching frequency capability, and excellent thermal management. The array configuration allows for efficient PCB layout and reduced system complexity. Its reliable design ensures performance in a wide range of operating conditions.\n\nCommon applications include renewable energy inverters, industrial automation, and consumer power supplies. Renewable energy inverters benefit from its high efficiency and reliability. Industrial automation systems utilize its precision for control circuits. Consumer power supplies rely on its compact size and performance.\n\nDiscover the advantages of the HS8MA2TCR1. Submit an inquiry today to learn more about availability and pricing. Our team is committed to supporting your project needs.
General specs
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: DFN3333-9DC
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