MX0912B251Y
Rochester Electronics, LLC
Rochester Electronics, LLC
MX0912B251Y - NPN SILICON RF POW
$249.60
Available to order
Reference Price (USD)
1+
$249.60000
500+
$247.104
1000+
$244.608
1500+
$242.112
2000+
$239.616
2500+
$237.12
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
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MX0912B251Y
$249.60
Product details
Rochester Electronics, LLC presents the MX0912B251Y a high-reliability RF BJT transistor engineered for critical discrete semiconductor applications. This bipolar junction transistor delivers superior phase linearity and dynamic range performance essential for modern communication systems. Its advanced epitaxial base structure minimizes transit time effects while maintaining excellent current handling capacity. The product features a gold metallization system for optimal contact reliability and corrosion resistance. Engineers will appreciate the well-defined S-parameters and consistent high-frequency characteristics across production lots. Primary implementations include military-grade encrypted communication devices and electronic warfare systems. Commercial applications span point-to-point radio links and cellular small cell infrastructure deployments. In the medical field, it enables precise signal generation in therapeutic ultrasound devices and MRI gradient amplifiers. The MX0912B251Y also serves vital functions in industrial process control systems and automated test equipment. Its compatibility with both leaded and surface-mount assembly processes provides design flexibility. Rochester Electronics, LLC employs rigorous screening protocols to ensure military-specification compliance where required. The transistor comes with complete characterization data and application-specific performance guidelines. Access our online design support tools including impedance matching calculators and thermal modeling software. Contact our technical sales team for assistance selecting the optimal MX0912B251Y variant for your RF power amplification requirements.
General specs
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 690W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 15A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-439A
- Supplier Device Package: CDFM2
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