2N3497
Microchip Technology
Microchip Technology
SMALL-SIGNAL BJT
$32.40
Available to order
Reference Price (USD)
1+
$32.40000
500+
$32.076
1000+
$31.752
1500+
$31.428
2000+
$31.104
2500+
$30.78
Exquisite packaging
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2N3497
$32.40
Product details
Optimize your RF circuits with the 2N3497 BJT transistor from Microchip Technology, a premium solution in the discrete semiconductor products market. This RF bipolar transistor delivers exceptional linearity and low intermodulation distortion, crucial for high-fidelity signal processing. Its advanced architecture ensures minimal phase noise, making it perfect for precision applications. The device features enhanced thermal management properties and electromagnetic shielding for reliable operation in harsh environments. With its compact form factor, the 2N3497 saves valuable board space without compromising performance. Typical implementations include cellular infrastructure equipment where consistent signal amplification is vital. Industrial automation systems benefit from its robustness in motor control and sensor interfaces. For military applications, it provides secure communication links in encrypted transmission systems. The transistor also excels in scientific instrumentation requiring accurate signal measurement. Engineers appreciate its design flexibility for both narrowband and broadband configurations. Microchip Technology backs this product with rigorous quality testing and long-term reliability assurance. Whether you're upgrading existing equipment or developing next-gen RF solutions, the 2N3497 offers the performance edge you need. Visit our website to compare technical specifications or request a sample for evaluation. Let our experts guide you to the ideal transistor solution submit your project requirements now for a customized quotation.
General specs
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 120V
- Frequency - Transition: 150MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: -
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