RJP65T43DPQ-A0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 60A TO247A
$3.01
Available to order
Reference Price (USD)
1+
$4.22000
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$3.76700
25+
$3.39000
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RJP65T43DPQ-A0#T2
$3.01
Product details
The RJP65T43DPQ-A0#T2 by Renesas Electronics America Inc is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the RJP65T43DPQ-A0#T2 is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the RJP65T43DPQ-A0#T2 and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Power - Max: 150 W
- Switching Energy: 170µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 69 nC
- Td (on/off) @ 25°C: 35ns/105ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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