RJP30E3DPP-M0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT
$2.83
Available to order
Reference Price (USD)
1+
$2.83000
500+
$2.8017
1000+
$2.7734
1500+
$2.7451
2000+
$2.7168
2500+
$2.6885
Exquisite packaging
Discount
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RJP30E3DPP-M0#T2
$2.83
Product details
Optimize your power electronics with the RJP30E3DPP-M0#T2 single IGBT transistor from Renesas Electronics America Inc. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The RJP30E3DPP-M0#T2 is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the RJP30E3DPP-M0#T2 can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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