STGWA30M65DF2
STMicroelectronics

STMicroelectronics
IGBT 650V 30A TO247-3
$3.74
Available to order
Reference Price (USD)
1+
$4.90000
30+
$4.21167
120+
$3.69192
510+
$3.18945
1,020+
$2.73900
2,520+
$2.62350
Exquisite packaging
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Product details
The STGWA30M65DF2 by STMicroelectronics is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the STGWA30M65DF2 is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the STGWA30M65DF2 and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 258 W
- Switching Energy: 300µJ (on), 960µJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 31.6ns/115ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads