RJK0222DNS-00#J5
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
$1.06
Available to order
Reference Price (USD)
1+
$1.06000
500+
$1.0494
1000+
$1.0388
1500+
$1.0282
2000+
$1.0176
2500+
$1.007
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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RJK0222DNS-00#J5
$1.06
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 14A, 16A
- Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
- Power - Max: 8W, 10W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (5x6)
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