Shopping cart

Subtotal: $0.00

CAB008A12GM3

Wolfspeed, Inc.
CAB008A12GM3 Preview
Wolfspeed, Inc.
1200V 2B HALF-BRIDGE, ALN
$323.76
Available to order
Reference Price (USD)
1+
$323.76000
500+
$320.5224
1000+
$317.2848
1500+
$314.0472
2000+
$310.8096
2500+
$307.572
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Wolfspeed, Inc. CAB008A12GM3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
CAB008A12GM3

CAB008A12GM3

$323.76

Product details

The CAB008A12GM3 by Wolfspeed, Inc. is a cutting-edge MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product delivers exceptional performance in power switching applications, making it a preferred choice for engineers.\n\nThe CAB008A12GM3 features low conduction losses, high switching frequency capability, and excellent thermal management. The array configuration allows for efficient PCB layout and reduced system complexity. Its reliable design ensures performance in a wide range of operating conditions.\n\nCommon applications include renewable energy inverters, industrial automation, and consumer power supplies. Renewable energy inverters benefit from its high efficiency and reliability. Industrial automation systems utilize its precision for control circuits. Consumer power supplies rely on its compact size and performance.\n\nDiscover the advantages of the CAB008A12GM3. Submit an inquiry today to learn more about availability and pricing. Our team is committed to supporting your project needs.

General specs

  • Product Status: Active
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 46mA
  • Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 13.6nF @ 800V
  • Power - Max: 10mW (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

Viewed products

NXP Semiconductors

MRF6VP2600HR5,178

$0.00 (not set)
Diodes Incorporated

DMN10H220LDV-7

$0.00 (not set)
STMicroelectronics

STL38DN6F7AG

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AOCA24106E

$0.00 (not set)
Microchip Technology

APTC80H29SCTG

$0.00 (not set)
Comchip Technology

CMSBN6601-HF

$0.00 (not set)
Diodes Incorporated

DMN3003LCA8-7

$0.00 (not set)
Vishay Siliconix

SI1036X-T1-GE3

$0.00 (not set)
Diodes Incorporated

DMTH4014LDVW-13

$0.00 (not set)
Microchip Technology

MSCSM120AM042CT6AG

$0.00 (not set)
Top