RJH60V2BDPP-M0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 25A 34W TO-220FL
$2.71
Available to order
Reference Price (USD)
1+
$2.99000
10+
$2.70500
25+
$2.41520
Exquisite packaging
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RJH60V2BDPP-M0#T2
$2.71
Product details
The RJH60V2BDPP-M0#T2 from Renesas Electronics America Inc is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the RJH60V2BDPP-M0#T2 ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the RJH60V2BDPP-M0#T2 for your next project request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 25 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
- Power - Max: 34 W
- Switching Energy: 30µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 33ns/65ns
- Test Condition: 300V, 12A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FL
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