STGP4M65DF2
STMicroelectronics
STMicroelectronics
IGBT M SERIES 650V 4A LOW LOSS
$1.10
Available to order
Reference Price (USD)
1+
$1.30000
50+
$1.11120
100+
$0.92480
500+
$0.77568
1,000+
$0.62658
2,500+
$0.58930
5,000+
$0.56445
Exquisite packaging
Discount
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STGP4M65DF2
$1.10
Product details
The STGP4M65DF2 from STMicroelectronics is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the STGP4M65DF2 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the STGP4M65DF2 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 16 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 68 W
- Switching Energy: 40µJ (on), 136µJ (off)
- Input Type: Standard
- Gate Charge: 15.2 nC
- Td (on/off) @ 25°C: 12ns/86ns
- Test Condition: 400V, 4A, 47Ohm, 15V
- Reverse Recovery Time (trr): 133 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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