IXXH100N60C3
IXYS
IXYS
IGBT 600V 190A 830W TO247AD
$17.39
Available to order
Reference Price (USD)
30+
$11.40233
Exquisite packaging
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IXXH100N60C3
$17.39
Product details
Optimize your power electronics with the IXXH100N60C3 single IGBT transistor from IXYS. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The IXXH100N60C3 is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the IXXH100N60C3 can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 190 A
- Current - Collector Pulsed (Icm): 380 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
- Power - Max: 830 W
- Switching Energy: 2mJ (on), 950µJ (off)
- Input Type: Standard
- Gate Charge: 150 nC
- Td (on/off) @ 25°C: 30ns/90ns
- Test Condition: 360V, 70A, 2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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