RJH60D7BDPQ-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 90A 300W TO-247
$6.12
Available to order
Reference Price (USD)
1+
$6.41000
10+
$5.72300
25+
$5.15040
100+
$4.69250
Exquisite packaging
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RJH60D7BDPQ-E0#T2
$6.12
Product details
The RJH60D7BDPQ-E0#T2 from Renesas Electronics America Inc is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the RJH60D7BDPQ-E0#T2 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the RJH60D7BDPQ-E0#T2 for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 300 W
- Switching Energy: 700µJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 125 nC
- Td (on/off) @ 25°C: 60ns/180ns
- Test Condition: 300V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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