RGTH60TS65DGC13
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V
$6.26
Available to order
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$6.26000
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$6.1974
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$6.1348
1500+
$6.0722
2000+
$6.0096
2500+
$5.947
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RGTH60TS65DGC13
$6.26
Product details
Experience unparalleled power control with the RGTH60TS65DGC13 single IGBT transistor by Rohm Semiconductor. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The RGTH60TS65DGC13 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the RGTH60TS65DGC13 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 58 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 194 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 27ns/105ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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