NP16N06QLK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER TRANSISTOR AUTOMOTIVE MOS
$1.78
Available to order
Reference Price (USD)
1+
$1.78000
500+
$1.7622
1000+
$1.7444
1500+
$1.7266
2000+
$1.7088
2500+
$1.691
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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NP16N06QLK-E1-AY
$1.78
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
- Power - Max: 1W (Ta), 25W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: 8-HSON (5x5.4)
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